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NTD95N02R
TYPICAL CHARACTERISTICS
5000
4500
4000
3500
3000
2500
C ISS
V DS = 0 V
V GS = 0 V
T J = 25 ° C
C ISS
6
5
4
3
Q GS
V DS
Q T
Q GD
V GS
12
8
2000
C RSS
1500
C OSS
2
4
1000
500
0
10
5
V GS
0
V DS
5
10
15
C RSS
20
1
0
0
4
I D = 10 A
T J = 25 ° C
8 12 16 20
Q g , TOTAL GATE CHARGE (nC)
0
24
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE (V)
1000
Figure 7. Capacitance Variation
Figure 8. Gate?to?Source and Drain?to?Source
Voltage versus Total Charge
100
V DS = 10 V
I D = 30 A
V GS = 10 V
90
80
V GS = 0 V
T J = 25 ° C
100
10
t r
t f
t d(off)
t d(on)
70
60
50
40
30
20
10
1
1
10
100
0
0.4
0.6
0.8
1.0
1.2
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
ORDERING INFORMATION
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
NTD95N02R
NTD95N02RG
NTD95N02R?001
NTD95N02R?001G
NTD95N02RT4
NTD95N02RT4G
Device
Package
DPAK
DPAK
(Pb?Free)
DPAK
DPAK
(Pb?Free)
DPAK
DPAK
Shipping ?
75 Units / Rail
75 Units / Rail
75 Units / Rail
75 Units / Rail
2500 Units / Tape & Reel
2500 Units / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
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